Sort by
Refine Your Search
-
Category
-
Country
-
Program
-
Field
-
small twist, the resulting heterostructure can exhibit remarkable properties. Notably, a non-ferroelectric insulator can become ferroelectric solely due to interlayer sliding—without chemical modification
-
another, the electronic properties of the resulting heterostructure can change dramatically. Remarkably, a large-bandgap insulator can become ferroelectric, solely due to this relative twist—without any
-
in their decisions and businesses in their strategies. Do you want to know more about LIST? Check our website: https://www.list.lu/ How will you contribute? HfO2-based thin films changed the way we
-
, semiconductor physics, or materials science. Experience with thin-film capacitor testing, pulse measurement setups, or ferroelectric/memristive devices will be appreciated Website for additional job details https
-
semiconductors), through innovative concepts involving long-range magnetic order, ferroelectricity, magnetoelectricity, ferroelectric control of the transport of magnetic or spin properties, and/or spin-charge
-
ferroelectrics, thermoelectrics, and nanomaterials. Computational modeling approaches include high-throughput computation (see jarvis.nist.gov), predictive tight-binding analysis (see github.com/usnistgov
-
promising for new type of computing based on thermal currents rather than electric currents. The objective of the PhD thesis, which is part of the ANR SUPER, is to develop ferroelectric superlattices
-
its employees in reconciling work and family life and regularly undergoes the audit berufundfamilie® . Further information at: http://www.ifw-dresden.de . The Nanostructured Thin Film Materials (NTFM
-
(https://atomicfilmslab.org) and will work closely with the computational, device, and simulation teams, as well as with the education and mentorship teams comprising ASWESOME. This position will inform
-
device modeling such as memristors and ferroelectric FETs such as with Verilog-A. Minimum Qualifications: Requires a minimum of a Ph.D. or equivalent terminal degree in electrical engineering, computer