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Funded PhD studentship in AI-assisted materials discovery at the UK National Epitaxy Facility School of Electrical and Electronic Engineering PhD Research Project Competition Funded UK Students
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, catalysis and biology. We use molecular beam epitaxy (MBE) to synthesize atomically precise crystals, we integrate them with two-dimensional exfoliated materials, and we characterize them using transport and
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, catalysis and biology. We use molecular beam epitaxy (MBE) to synthesize atomically precise crystals, we integrate them with two-dimensional exfoliated materials, and we characterize them using transport and
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MOVPE system during the same epitaxy cycle as GaN-based active devices, h-BN is on the verge of being commercialized on a large scale. Given the complexity of the MOVPE epitaxy environment, there is a
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Foundation (FAPESP and based at CNPEM. The fellow will work on materials synthesis and epitaxial thin films, performing structural and spectroscopic characterization (X-ray photoelectron spectroscopy – XPS
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the Forschungsverbund Berlin (https://www.fv-berlin.de/ ) and the Leibniz Association www.leibniz-gemeinschaft.de . You can find more details on the institute webpage: www.ikz-berlin.de . The SiGe-based Quantum Materials
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extremely interesting for superconducting spintronics. The SPIXY (spintronic & epitaxy) team at CINaM is specialized in the epitaxial growth of novel antiferromagnetic materials such as Mn5Si3 altermagnet
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photonics for high-performance circuits. Conduct research in areas such as high-speed III-V component design, semiconductor epitaxial engineering, and fabrication of active components (e.g., diodes, HEMTs
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National Aeronautics and Space Administration (NASA) | Pasadena, California | United States | about 6 hours ago
engineering methods to fabricate advanced detector technologies and optical components. Research within the UV detector technology team has largely focused on the use of molecular beam epitaxy (MBE) for band
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sputter epitaxy (MSE) – a new sustainable core technology for production of group III-nitride semiconductors for power electronics and other applications, with special focus on strain management (including