Sort by
Refine Your Search
-
Listed
-
Category
-
Country
-
Program
-
Field
-
III-N par HVPE (Hydride Vapor Phase Epitaxy) au sein de l'Institut Pascal. Les matériaux étudiés sont le GaAs et l'InAs d'une part et le GaN et l'InN d'autre part, ainsi que leurs alliages respectifs
-
? No Offer Description - work environment: The Institut d’Electronique et des Systèmes (IES) is a joint research unit from U. Montpellier and CNRS. The nanoMIR research group (https
-
Funded PhD studentship in AI-assisted materials discovery at the UK National Epitaxy Facility School of Electrical and Electronic Engineering PhD Research Project Competition Funded UK Students
-
, catalysis and biology. We use molecular beam epitaxy (MBE) to synthesize atomically precise crystals, we integrate them with two-dimensional exfoliated materials, and we characterize them using transport and
-
/ Partnerships Partners of the PEPR DIADEM – CINEMA project funding this PhD: IRCER, Institut P’, ILM https://www.pepr-diadem.fr/projet/cinema-2/ Scientific Field and Context The optimization of growth–property
-
at CRHEA (Valbonne, 06). It will focus on the epitaxy of these new structures using MBE and MOVPE techniques and their structural and electrical characterizations which will be validated by the partners
-
Sorbonne Université SIS (Sciences, Ingénierie, Santé) | Paris 15, le de France | France | 16 days ago
materials based on Sn epitaxial lattices. For this experimental project, the PhD student will study theSn growth and structure, using scanning tunneling microscopy and surface X-ray diffraction on synchrotron
-
. Currently available topics, application and more information: https://phdquantumgrenoble.univ-grenoble-alpes.fr/phd-application/available-phd-subjects PhD subjects (full list available via the attached link
-
individuals and careers, across staff and students, developing and supporting our subject discipline. About the role The post holder will be the senior technician in the Molecular Beam Epitaxy (MBE) facility
-
Postdoctoral researcher (M/F), synthesis of crystal phase heterostructures by Molecular Beam Epitaxy
optimize the growth of GaAs nanowires integrating crystal-phase heterostructures by molecular beam epitaxy (MBE). Contribute to scientific writing, presentation of results, and promotion of the project's