Sort by
Refine Your Search
-
Listed
-
Category
-
Country
-
Program
-
Field
-
Job Purpose The Glasgow Epitaxy Facility is a specialist research and innovation facility supporting the growth and delivery of high-quality III–V (GaAs- and InP-based) semiconductor wafers
-
academic partners in Poland and abroad. Mentor and support junior team members in the field of MBE/MOCVD epitaxy. Where to apply Website https://system.erecruiter.pl/FormTemplates/RecruitmentForm.aspx?WebID
-
School graduates over a thousand students who are ready to take on great ambitions and challenges. For more details, please view: https://www.ntu.edu.sg/eee The Belopolski Research Group (QuantumX Labs) is
-
of Physics' development lines. The required commitment will involve experimental research in condensed matter physics, particularly in the field of the fabrication of epitaxial films of highly correlated
-
Funded PhD studentship in AI-assisted materials discovery at the UK National Epitaxy Facility School of Electrical and Electronic Engineering PhD Research Project Competition Funded UK Students
-
. ------------------------------------------------------------------------------------------------------------------------------------------------------------------------ ------------------------------------------------------------------------------------------------------------------------------...
-
? No Offer Description - work environment: The Institut d’Electronique et des Systèmes (IES) is a joint research unit from U. Montpellier and CNRS. The nanoMIR research group (https
-
III-N par HVPE (Hydride Vapor Phase Epitaxy) au sein de l'Institut Pascal. Les matériaux étudiés sont le GaAs et l'InAs d'une part et le GaN et l'InN d'autre part, ainsi que leurs alliages respectifs
-
, Moving to Lund and Living in Lund .Read more about the University joint announcement: : https://www.lunduniversity.lu.se/lund-university-programme-global-excellence Duties – what we expect from you For
-
, catalysis and biology. We use molecular beam epitaxy (MBE) to synthesize atomically precise crystals, we integrate them with two-dimensional exfoliated materials, and we characterize them using transport and