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devices and associated electronics, and support for experiments during the VAMOS experimental campaigns at GANIL -The analysis of data obtained during experiments scheduled during the VAMOS experimental
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, upon aging results, to specify the PCB packaging design routes that are capable to meet the upcoming WBG power device stress requirements. Power electronic conversion is a key enabling technology to
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, electron and optical lithography, reactive ion etching, as well as surface treatment (ALD, CVD, …). Classical analysis via SEM, AFM, XPS, Raman will be required. Finally, quantum analysis is required in
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letter - Contact of at least two referees, able to be contacted to provide recommendations - All documents should be sent by email to Dr. Thomas Castanheiro ; thomas.castanheiro-matias@univ-rouen.fr Work
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• Experience in characterization of functional oxide thin films, including diffraction techniques (XRD, XRR, RSM), electron microscopy (SEM, EDX and TEM), Atomic Force Microscopy (AFM), X-ray photoelectron
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, CNRS) located on the St-Charles campus in Marseilles. Working days are normally from Monday to Friday, but work outside those working days might be possible. Dedicated material : Desk, computer
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, computer science (medical image processing), medical physics. Computer skills: Python, C++ (ITK, RTK). Languages: English required, French optional. Website for additional job details https://emploi.cnrs.fr/Offres
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classical system, such as a macroscopic ferromagnet, magnonic excitations, or magnetic domain walls; (ii) The effect of spin-orbit coupling on the electronic and spin transport in semiconductor quantum wires
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Université Grenoble Alpes, laboratoire TIMC, équipe GMCAO | Grenoble, Rhone Alpes | France | 20 days ago
Post-doctoral Position In Medical Image Processing The Computer-Assisted Medical Interventions (CAMI) team at the TIMC laboratory (Grenoble, France) is seeking a highly motivated postdoctoral researcher
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or PostDoc) will deal with the generation of spin and orbital electronic currents for spin–orbit torques in solid-state devices made of light metals, metallic ferromagnets and/or magnetic insulators. In