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MSD’s Nanoscale Magnetic and Electronic Heterostructures Group requires expert technical assistance on in-situ electron microscopy characterization of switching dynamics in ferroelectric oxides and
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techniques, and carry out any required data analysis. Position Requirements • Experience working with Lorentz Transmission Electron Microscopy. • Strong background in Materials Science or Physics. • Min
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of advanced scanning/transmission electron microscopy (S/TEM) methods for cutting-edge scientific research in areas such as quantum materials and low-dimensional energy systems. This position emphasizes
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materials – including Raman, atomic force microscopy, and scanning electron microscopy, running reactors such as CSTRs to run various processes. and exfoliation of graphite into graphene using solution-based
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nanotransmission X-ray microscopy), as well as experience in diffraction and spectroscopy techniques. Candidates should be creative experimentalists capable of building custom apparatus beyond standard commercial
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probes (e.g., synchrotron based X-ray reflectivity, optical holographic interferometry, scanning probe microscopy). Work includes the experimental design, interpretation of data, and the presentation
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from academia, national laboratories and industry on advanced synchrotron X-ray, electron microscopy characterization, interfacial analysis, and full-cell prototyping. Position Requirements Recent
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are seeking an postdoctoral appointee to contribute to this research to understand the underlying physics of spin and charge based memory materials using advanced in-situ transmission electron microscopy (TEM
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. Experience using analytical tools, such as particle size analyzer, X-Ray diffraction, electron microscopy (SEM and TEM), spectroscopy (FTIR and Raman), surface area analysis, and electrochemical (EIS and RDE
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with other semiconductor materials. The studies will involve fabrication of heterojunction devices as well as detail characterization of the interface using various spectroscopy and microscopy techniques