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-small silicon nanocavities [Babar2023, Rosiek2023] with extreme light-matter interactions. We aim to combine fundamental theory, device design, and our unrivalled capabilities in high-resolution silicon
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electronic components including SiC/GaN based devices. The candidate will also have opportunity to work with industry related problems. Key Responsibilities Research & Learning: Develop expertise in advanced
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Applicants should hold a relevant MSc degree in electronics, electrical engineering, computer engineering, or related fields. Required Qualification: Solid background in digital CMOS design and deep learning
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-of-the-art facilities and deep expertise. Our infrastructure spans the full spectrum from fundamental electrochemical studies to the fabrication of lab-scale components and devices. Responsibilities and
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components including SiC/GaN based devices. The candidate will also have the opportunity to work with industry related problems. Key Responsibilities Research & Learning: Develop expertise in advanced control
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, and characterization of such devices. Responsibilities and qualifications The focus of this position is to help advance the development of a reliable and efficient dual-fuel HT-PEMFC using multi-physics
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doctoral candidate who meets the following requirements: A background and strong interest in aluminum alloys, fatigue analysis, and numerical modelling is preferred. Experience with computer aided design
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group at CIE. The aim of the position is to build strong knowledge and competencies within the field of electrochemical storage device design, simulation and testing. Job description You will conduct
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next-generation nano-optoelectronic devices with enhanced or entirely new properties. We welcome candidates with a strong background in condensed-matter physics and/or quantum nanophotonics, who