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Experience1 - 4 Additional Information Eligibility criteria The position requires a PhD in Earth sciences, applied mathematics, or a related field, experience with topological analysis or data science, and
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9 Oct 2025 Job Information Organisation/Company CNRS Department Laboratoire d'optique atmosphèrique Research Field Environmental science Environmental science » Earth science Environmental science
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Postdoctoral researcher in the analysis of single-cell and spatial transcriptomics experiments (M/F)
4 Oct 2025 Job Information Organisation/Company CNRS Department Institut de génétique et de biologie moléculaire et cellulaire Research Field Chemistry » Biochemistry Physics » Biophysics Biological
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Research FieldEnvironmental science » Global changeYears of Research ExperienceNone Additional Information Eligibility criteria • PhD in atmospheric sciences • Knowledge of cloud physics • Experience in
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28 Oct 2025 Job Information Organisation/Company CNRS Department Laboratoire Interdisciplinaire Carnot de Bourgogne Research Field Engineering Physics Technology Researcher Profile First Stage
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Additional Information Eligibility criteria The candidate should hold a PhD in materials science and related field. Knowledge of electrochemistry, mechanics and battery technologies would be considered a
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Additional Information Eligibility criteria • PhD in developmental biology, or related fields such as regenerative biology, cell biology, molecular genetics • Experience in microscopy (preferably live
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Additional Information Eligibility criteria -PhD in atomic and molecular physics, chemical physics, or quantum chemistry. -Strong experience in numerical methods, electronic structure theory, and/or time
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4 Oct 2025 Job Information Organisation/Company CNRS Department Institut Montpelliérain Alexander Grothendieck Research Field Mathematics History » History of science Researcher Profile First Stage
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Additional Information Eligibility criteria ● A relevant PhD degree in semiconductor physics, material sciences, or similar. ● Hands-on experience with III-V semiconductor deposition processes (e.g. MOCVD, MBE