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Novel Broadband (Visible-to-Shortwave Infrared) CMOS Image Sensor Pixel Architectures Job description The Image Sensor Group in the EIectronic Instrumentation Lab is looking for a postdoctoral
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large polarization, high thermal stability, and CMOS compatibility, opening the way to their integration in future III-nitride electronic and memory platforms. The project involves advanced epitaxy, in
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have submitted their doctoral thesis before starting in post. The ideal candidate will have a strong experimental background in one or more of the following fields: integrated circuits, GaN, CMOS, active
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resistivity. An essential aspect of the work carried out by these three laboratories, and particularly by the CEA (DCOS), is to develop a technology path that is directly compatible with CMOS technologies [4
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or by homogeneously/heterogeneously integrate the devices developed with CMOS and/or other technologies; • Collect and analyse data to characterise single sensors and the full solution at system level
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performant, CMOS compatible, infrared colloidal quantum dot photodetectors and light emitters exploiting intersubband transitions. The project is focused in the mid and long wave infrared employing colloidal
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. 2. Wu, E., et al., A CMOS-Compatible Fabrication Approach for High-Performance Perovskite Photodetector Arrays. Advanced Optical Materials, 2025. 13(10): p. 2402979. 3. Fabrizi, F., et al., A
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following: Designing efficient digital CIM architecture using advanced CMOS nodes Develop system architecture for digital CIM accelerator Develop efficient mapping schemes of AI workloads Identifying
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accelerator design for future neuromorphic accelerators. The candidate will work on the following: Designing efficient digital CIM architecture using advanced CMOS nodes Develop system architecture for digital
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electrophysiological recording (cMOS Multielectrode array) and calcium imaging and optogenetics. The long-term goal is to understand how cortical organoids process information. For this aspect there will be