Sort by
Refine Your Search
-
Listed
-
Country
-
Employer
- Fraunhofer-Gesellschaft
- University of Southern Denmark
- Linköping University
- Forschungszentrum Jülich
- Leibniz
- University of Twente
- DTU Electro
- Delft University of Technology (TU Delft)
- Delft University of Technology (TU Delft); Published today
- Delft University of Technology (TU Delft); today published
- Delft University of Technology (TU Delft); yesterday published
- Eindhoven University of Technology (TU/e)
- IMEC
- Inria, the French national research institute for the digital sciences
- Instituto de Telecomunicações
- Newcastle University;
- University of Twente (UT)
- Université de Bordeaux - Laboratoire IMS
- 8 more »
- « less
-
Field
-
of semiconductor technology through 2D materials? Join us in developing next-generation CMOS devices at the sub-1 nm node! Information The future of semiconductor technology depends on breakthrough materials
-
, the CMOS design flow is to be improved while simultaneously being made transparent and verifiable. What you will do We're looking for you to investigate AI methods for digital circuit design. You'll be
-
sensors based on the integration of organic light emitting diodes (OLED) onto silicon CMOS substrates. Here, our activities range from the initial idea, through design in close cooperation with the OLED
-
? We invite applications for a PhD position, focusing on the design and implementation of Spiking Neural Networks (SNNs) using CMOS technology. Project Overview This PhD position is part of a
-
Job Description Are you passionate about designing ultra-low-power electronics for neural and wearable systems? Do you want to develop custom CMOS circuits that serve as the foundation
-
Inria, the French national research institute for the digital sciences | Paris 15, le de France | France | about 14 hours ago
, with a researcher, an engineer, and a postdoctoral scholar. You will be involved in state-of-the-art research in ambient-powered biodegradable RFID electronics involving both standard silicon CMOS design