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-effectively integrated into advanced technology nodes for sensor, nonvolatile memory, logic, and neuromorphic applications. Currently, hafnium-zirconium mixed oxide (HfxZr1-xO2) offers the widest stoichiometry
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identified the first mutations in the NLGN-NRXN-SHANK pathway, which has a key role in synapse formation within the brain. Our results highlight the genetic heterogeneity of autism, but also point at common
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the first mutations in the NLGN-NRXN-SHANK pathway, which has a key role in synapse formation within the brain. Our results highlight the genetic heterogeneity of autism, but also point at common biological
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