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Job Description Apply now Req Id: 38314 Job Title: Post Doc Research Associate City: West Lafayette Job Description: Job Summary Position Summary: The 2D Quantum Materials and Devices Lab, led by Dr
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mechanical fatigue—individually and sequentially, followed by electrical breakdown testing to assess their impact on the dielectric performance of the material subsystems. The target is to develop a
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second class UK honours degree or equivalent. This project would suit an applicant with a materials science/engineering, mechanical/chemical engineering or chemistry background or a related discipline
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of health and welfare in turbot. Specifically: A3/T2 – Participation in sampling campaigns for the collection of biological material; Processing of samples for shotgun and targeted proteomic analysis; A4/T2
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» Inorganic chemistry Chemistry » Physical chemistry Engineering » Chemical engineering Engineering » Materials engineering Technology » Energy technology Technology » Materials technology Researcher Profile
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of helical ballistic edge states. For 2D systems or 3D higher order topological insulators (TI), they form one dimensional conducting channels on the edges with two time-reversed spin-momentum-locked states
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on composite materials, which now play an important role in structures. The ICA brings together around 80 teacher-researchers, 20 temporary researchers, 20 BIATSS staff, 90 doctoral students, and numerous
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Institut de chimie des milieux et matériaux de Poitiers - Equipe SAMCat | Poitiers, Poitou Charentes | France | 13 days ago
facilities. These materials, originating from ore processing, still contain potentially recoverable substances such as precious metals, but also toxic elements like arsenic, sulfur, or reagents used during ore
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, and materials science, with a strong publication record (h-index 36, i10-index 69). The second supervisor is Dr. Indrat Aria, a materials scientist with expertise in low-dimensional nanomaterials and
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the printing processing of the active material influences the doping capacity and balance and thereby the p-n junction doping structure. The second part of the project comprises the utilization