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third of all produced electricity passes through power electronic devices at some stage before consumption with the predicted increase up to 80 % for the next decade. Therefore, even small efficiency
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for power electronics, RF amplifiers, and motor drives. By incorporating vertical structures, these devices achieve high current handling capabilities while maintaining efficient thermal management
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dynamically developed material in semiconductor industry marked by a Nobel Prize for invention of blue/white LEDs. III-N materials are currently attracting a lot of interest also for applications in power, high
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of Ga2O3 and development of related electronic devices for power applications. The aim of the work will be the study and detailed characterization of the electrical breakdown of transistors and diodes based
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email to: andrej.herzan@savba.sk Where to apply E-mail andrej.herzan@savba.sk Requirements Research FieldPhysicsEducation LevelMaster Degree or equivalent Skills/Qualifications Essential skills and
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email to: andrej.herzan@savba.sk Where to apply E-mail andrej.herzan@savba.sk Requirements Research FieldPhysicsEducation LevelMaster Degree or equivalent Skills/Qualifications Essential skills and
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LevelMaster Degree or equivalent Skills/Qualifications excellent written and oral communication skills ability to communicate in English to an international scientific audience ability to work as part of
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chemistryEducation LevelMaster Degree or equivalent Skills/Qualifications excellent written and oral communication skills ability to communicate in English to an international scientific audience ability to work as
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or quantum chemistry, while knowledge of relativistic physics and computational science is welcome. excellent written and oral communication skills and the ability to communicate in English to an international
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willingness to learn new technologies, and the ability to translate research into high-quality outputs. Where to apply E-mail geogsekr@savba.sk Requirements Research FieldGeographyEducation LevelPhD