Postdoc in semiconductor epitaxy

Updated: about 2 months ago
Location: Montpellier, LANGUEDOC ROUSSILLON
Job Type: FullTime
Deadline: 03 Apr 2026

3 Mar 2026
Job Information
Organisation/Company

Universite de Montpellier
Department

Human Resources
Research Field

Physics » Crystal growth
Engineering » Materials engineering
Physics » Applied physics
Physics » Condensed matter properties
Researcher Profile

Recognised Researcher (R2)
Positions

Postdoc Positions
Application Deadline

3 Apr 2026 - 23:59 (Europe/Paris)
Country

France
Type of Contract

Temporary
Job Status

Full-time
Is the job funded through the EU Research Framework Programme?

Horizon Europe
Reference Number

2026-R0191
Is the Job related to staff position within a Research Infrastructure?

No

Offer Description

- work environment: The Institut d’Electronique et des Systèmes (IES) is a joint research unit from U. Montpellier and CNRS. The nanoMIR research group (https://nanomir.edu.umontpellier.fr/ ) is a world leader in GaSb-based mid-infrared (MIR) optoelectronic devices. The group specializes in the molecular beam epitaxy (MBE) growth of III-V semiconductors and operates 3 reactors, inc. a multichamber reactor equipped with 2 III-V growth chambers and 1 CVD chamber for growing group-IV (Si, Ge) materials. The group fabricates the devices in the clean room of the Centre de Technologie de Montpellier (https://ctm.umontpellier.fr/ ) and runs its own electro-optic characterization setups. The group’s projects are supported by national (ANR) and European (Horizon Europe) funds.

- main mission: In the framework of France 2030’s HYBAT project, the nanoMIR group focuses part of its activities in developing Silicon photonics integrated circuits (PICs), where lasers and photodetectors are integrated with passive devices based on other technologies (Si, Ge, chalcogenides, ..). The postdoc staff will join the “Integration” team of the group. He/she will be in charge of developing the remote-plasma chemical vapor deposition (RP-CVD) of group-IV materials (Si(Ge)) on Si, the MBE growth of GaSb devices on these Si(Ge) templates and PIC fabrication.

Activities :RP-CVD epitaxy of group-IV materials, III-V heterostructure design, PIC design, MBE growth of III-V devices, PIC fabrication, material characterization, PIC characterization.

 


Where to apply
E-mail

eric.tournie@umontpellier.fr

Requirements
Research Field
Physics
Education Level
PhD or equivalent

Skills/Qualifications
  • Phd in Physics, Materials Science, Electrical Engineering, Photonics, or a similar field.
  • Expertise in epitaxy is a must.
  • Expertise in at least one of these fields: semiconductor physics, group-IV semiconductors, characterization of epitaxial materials, characterization of semiconductor heterostructures.
  • Ability to work well in a team. Fluency in English required.

Additional Information
Work Location(s)
Number of offers available
1
Company/Institute
Institut d'Electronique et des Systèmes (IES)
Country
France
Geofield


Contact
City

Montpellier
Website

https://nanomir.edu.umontpellier.fr/
Street

163 rue Auguste Broussonnet
Postal Code

34000

STATUS: EXPIRED

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