Post-doc position: Ferroelectric spin-orbit devices based on oxide 2DEGs (M/F)

Updated: 1 day ago
Location: Palaiseau, LE DE FRANCE
Job Type: FullTime
Deadline: 08 May 2026

18 Apr 2026
Job Information
Organisation/Company

CNRS
Department

Laboratoire Albert Fert
Research Field

Physics
Physics » Solid state physics
Physics » Surface physics
Researcher Profile

First Stage Researcher (R1)
Application Deadline

8 May 2026 - 23:59 (UTC)
Country

France
Type of Contract

Temporary
Job Status

Full-time
Hours Per Week

35
Offer Starting Date

1 Jun 2026
Is the job funded through the EU Research Framework Programme?

Not funded by a EU programme
Is the Job related to staff position within a Research Infrastructure?

No

Offer Description

The postdoctoral researcher will contribute to the development and demonstration of ferroelectric spin–orbit (FESO) devices based on two-dimensional electron gases (2DEGs) in BaTiO3. The project aims to explore a novel platform for ultralow-power electronic devices, combining ferroelectricity and spintronics, with strong potential for disruptive logic-in-memory computing architectures.

The candidate will carry out experimental work covering the full device chain: growth of ferroelectric thin films and 2DEGs (PLD, sputtering), nanofabrication in a cleanroom environment (UV and/or e-beam lithography), and electrical characterization (transport and magnetotransport). They will analyze device performance metrics such as output signal, switching speed, energy consumption, endurance, and scalability, and benchmark them against existing technologies (CMOS, MESO, etc.).

The project will be carried out within the Oxitronics group at Laboratoire Albert Fert (CNRS, Thales, Université Paris-Saclay), a leading laboratory in spintronics and oxide electronics. The lab offers a unique environment with advanced facilities for thin-film growth, nanofabrication, and characterization (XRD, scanning probe, magnetotransport). The project will be conducted in close interaction with the startup Nellow, with the goal of advancing FESO-based logic-in-memory architectures toward industrial deployment.


Where to apply
Website
https://emploi.cnrs.fr/Offres/CDD/UMR137-MANBIB-028/Default.aspx

Requirements
Research Field
Physics
Education Level
PhD or equivalent

Research Field
Physics
Education Level
PhD or equivalent

Research Field
Physics
Education Level
PhD or equivalent

Languages
FRENCH
Level
Basic

Research Field
Physics
Years of Research Experience
None

Research Field
Physics » Solid state physics
Years of Research Experience
None

Research Field
Physics » Surface physics
Years of Research Experience
None

Additional Information
Eligibility criteria

PhD in condensed matter physics or materials science. Strong background in magnetism, spintronics, and/or ferroelectricity. Experience in the growth of oxide thin films or ferroelectric materials. Proficiency in electrical transport measurements and data analysis. Experience in nanofabrication and cleanroom processes is highly desirable.


Website for additional job details

https://emploi.cnrs.fr/Offres/CDD/UMR137-MANBIB-028/Default.aspx

Work Location(s)
Number of offers available
1
Company/Institute
Laboratoire Albert Fert
Country
France
City
PALAISEAU
Geofield


Contact
City

PALAISEAU
Website

http://www.cnrs-thales.fr/

STATUS: EXPIRED

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