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National Laboratory is hiring a Postdoctoral Scholar - Polymer Dielectrics & Energy Storage within the Material Sciences division. This position will conduct research on polymer composite dielectrics
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Lawrence Berkeley National Laboratory is hiring a Postdoctoral Scholar – Polymer Dielectrics & Energy Storage within the Material Sciences division. This position will conduct research on polymer
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Postdoctoral position (M/F) on impedance and dielectric study of solid/solid interfaces in batteries
Research Framework Programme? Not funded by a EU programme Is the Job related to staff position within a Research Infrastructure? No Offer Description Boradband dielectric spectroscopy and electrochemical
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related field. • Strong background in polymer synthesis and polymer processing. • Experience in thermal, mechanical, crystallographic and dielectric characterization techniques (e.g. DSC, DMA, WAXS
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electroactive ceramics or polymers Experience and skills · Excellent knowledge in ferroelectric materials characterization techniques (capacitance, dielectric permittivity and polarization measurements
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ferroelectric materials characterization techniques (capacitance, dielectric permittivity and polarization measurements) and piezoelectric characterization techniques (e31 and d33 coefficients) · Knowledge
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• Exploration of dielectric-based resonant and non-resonant nanophotonic architectures compatible with large-area fabrication • Demonstration of prototype metasurface devices combining optical selectivity
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fabrication, including mask design, metal sputtering, laser or e-beam lithography, etching, and device integration Familiarity with thin-film materials (e.g., oxides, dielectrics, metals) and their integration
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• Exploration of dielectric-based resonant and non-resonant nanophotonic architectures compatible with large-area fabrication • Demonstration of prototype metasurface devices combining optical selectivity
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. Develop microfabrication processes of versatile dielectric thin films ranging from electroformed memristors (non-volatile memories) to defect-free high-K gate oxides. Develop and fabricate devices based